CAPABILITY:

JEDEC tray input/output

Accuracy +/- 3 µm @ 3 sigma cpk 1.33

Automatic calibration function to correct thermal changes over time

Simultaneous recognition camera with temperature control

Chip  to substrate and chip to wafer capable

Placement head for flip chip

Thermo compression head available

Bonding pressure 5N – 490N

4 points parallelism  adjustment system

Bonding head temperature up to 500˚ C

Heated bonding stage JEDEC format up to 250˚C

Ceramic heated bonding stage for 300 mm wafer up to 200˚C

Multi-chip placement in one single pass capability

Flux dipping station

Die pick from wafer (up to 12 inches), waffle pack or GEL-PACK ( 2 x 2 inches)

Wafer table with stretcher

2 positions automatic tool changer unit

SECs/GEM capability

Wafer scanner  and electronic wafer mapping capable

Pattern recognition system with edge, gray level, pattern and ink dot

Wafer size  150/200/300 mm on 300 mm wafer frame

Max quantity/wafer x=200 chips, y=200 chips

Frame size  375 mm

Die size  1 mm to 35 mm

Die thickness  0.05 to 7 mm