Integrated microsystems laboratory (MEMS) / Thin film deposition / Plasma enhanced chemical vapour deposition
SPTS Versalis FxP APM200
Supplier :
Model :
Purpose :
Plasma-enhanced Chemical Vapour Deposition of amorphous Silicon, Silicon Nitride, Tetraethylorthosilicate (TEOS)
CAPABILITY:
Wafer size: 200 mm
Thickness range of wafers: 300 – 1200 µm
Temperature range: 100 – 400 °C
Pressure range: 0.1 – 10 Torr
Gases used: O2, N2, SiH4, NH3, He, Ar, TEOS, C3F8
Wafer material: Silicon, Glass, Bonded wafers
Processes:
- 0.5 -1 µm thick film of Silicon Nitride deposited at 300 °C
- 1 – 2.5 µm thick film of TEOS deposited at 300 °C
- 0.5 -1 µm thick film amorphous Silicon deposited at 300 °C
