CAPACITY

Wafer size 200mm

Production wafers per load: 50

Thickness range of wafers: 300 – 1700 µm

Temperature range:  20 – 450 °C

Pressure range: 0.1  – 500 Torr

Gases used: Oxygen, Nitrogen, Forming gas (H₂ 4% and N₂ 96%)

Processes:

• Deposition of FOTS (C₈H₄Cl₃F₁₃Si) self-alignment monolayer (SAM) as an anti-stiction layer.
• Deposition of HMDS {[(CH₃)₃Si]₂NH} as adhesion promoter of photoresists
• Deposition of formic Acid (HCOOH) for de-oxydation of copper and other metals.

Wafer material: Silicon, Glass, Bonded wafers